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| SEMiX553GAL128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1200 533 379 300 600 -20 ... 20 10 -40 ... 150 421 289 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2300 -40 ... 150 Tc = 25 C Tc = 80 C 521 347 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A A A A A C A C V Conditions Values Unit SEMiX(R) 3s SPT IGBT Modules SEMiX553GAL128Ds Tj = 150 C IFnom Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 C Typical Applications* * AC inverter drives * UPS * Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 4.5 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 28.3 1.86 1.17 2880 1.33 1.9 2.1 1 0.9 3.0 4.0 5 0.1 2.35 2.55 1.15 1.05 4.0 5.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAL (c) by SEMIKRON Rev. 14 - 16.12.2009 1 SEMiX553GAL128Ds Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 5400 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 20 0.7 1 0.04 5 5 300 nH m m K/W Nm Nm Nm g Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 5400 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 0.75 0.5 2.5 2.7 0.75 0.5 2.5 2.7 2.0 1.8 1.1 0.85 3.0 3.2 325 46 17 0.11 2.0 1.8 1.1 0.85 3.0 3.2 325 46 17 0.11 2.5 2.3 1.45 1.2 3.5 3.7 Conditions VCC = 600 V IC = 300 A RG on = 3 RG off = 3 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C min. typ. 185 65 27 635 80 33 max. Unit ns ns mJ ns ns mJ 0.061 2.50 2.3 1.45 1.2 3.5 3.7 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W SEMiX 3s SPT IGBT Modules SEMiX553GAL128Ds (R) Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic welders up to 20 kHz Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 GAL 2 Rev. 14 - 16.12.2009 (c) by SEMIKRON SEMiX553GAL128Ds Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 14 - 16.12.2009 3 SEMiX553GAL128Ds Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 14 - 16.12.2009 (c) by SEMIKRON SEMiX553GAL128Ds SEMiX 3s spring configuration (c) by SEMIKRON Rev. 14 - 16.12.2009 5 SEMiX553GAL128Ds * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 6 Rev. 14 - 16.12.2009 (c) by SEMIKRON |
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